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The product is used in crystal-growing in Sic,EPI,Sic and PVT with the below advantage:
| D.Sic Physics Characteristics | ||
| Description | Unit | Parameter |
| Density | g/cm3 | 3.2 |
| Crystal type | β-SiC | |
| Hardness | HK | 2800 |
| Bending strength | Mpa | 170 |
| Yang's Modulus | Gpa | 320Gpa |
| Room temperature bonding force | Mpa | >8Mpa |
| size | mm | 0~2400 |
| thickness | um | 10~1000 |
| thermal conductivity | W/(m.K) | 290 |
| surface infrared reflectivity | % | 23 |
| depositable substrate | reaction sintering silicon carbide recrystalline carbonization | |
| silicon non-pressure sintered silicon carbide Graphite | ||
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