High Boron Silicon/Optical Communication Application Substrate

Product Details
Customization: Available
After-sales Service: One Year
Warranty: One Year

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Registered Capital
11600000 RMB
Plant Area
>2000 square meters
  • High Boron Silicon/Optical Communication Application Substrate
  • High Boron Silicon/Optical Communication Application Substrate
  • High Boron Silicon/Optical Communication Application Substrate
  • High Boron Silicon/Optical Communication Application Substrate
  • High Boron Silicon/Optical Communication Application Substrate
  • High Boron Silicon/Optical Communication Application Substrate
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Basic Info.

Model NO.
RAY-LH-LGXTGPG372#
Usage
Lighting
Type
Flat Lens
Transmittance
>95%
Shape
Single-lens
Material
Borosilicate Glass
Lenses Color
Clear
Certification
RoHS, ISO9001, CE
Customized
Customized
Coating
UV
Transport Package
Wooden
Specification
Based on size
Trademark
RAYTEK
Origin
Made in China

Product Description

BOROFLOAT ® 33 is a high-quality borosilicate glass with excellent properties and a wide range of applications.

BOROFLOAT ® 33 Basic Performance:

·Good transparency, low fluorescence intensity, and high UV and infrared transmittance

·Low coefficient of thermal expansion, strong resistance to thermal shock, and long-term operating temperature up to 450 ºC

·Good chemical stability, with high resistance to corrosion from water, strong acids, strong bases, and organic substances

·Scratch resistance, high hardness, and a density 20% lower than ordinary sodium calcium glass

·Low alkaline content, can be used as an excellent electrical insulator
Technical parameter Chemical composition
Density(25 degrees) 2.2g/cm2 High Boron Silicon/Optical Communication Application Substrate
Coefficient of expansion(ISO 7991) 3.25'10-6k-1
Transmittance 91%
Softening point 820ºC
Short term use(<10h) 550ºC
Long term use(>=10h) 450ºC
Refractive index(587.6nm) 1.47140
Knoop hardness 480

BOROFLOAT ® 33 Basic Applications:

·Semiconductors, microelectronics, sensors (optical communication, silicon wafer bonding, CCD/CMOS, MEMS, IC packaging, wafers, substrates, and optical components)

·Medical technology, biotechnology (microarray chips, glass slides, DNA arrays, microscope slides, enzyme-linked immunosorbent assay plates, X-ray cover plates, culture vessels)

·Environmental engineering, chemical industry (corrosion-resistant lining and observation mirror for reaction vessels, fluid systems)

·Optics (digital projector mirrors, optical instruments, telescope lenses, UV mirrors, filters, cold mirrors, reflector covers, color wheels, color separation filters, folding mirrors, DWDM filters)

·Lighting (protective panels for stage lighting, spotlights, spotlights, and high-power floodlights)

·Household appliances (microwave perspective door, pyrolysis furnace door, fryer lid, oven light protective cover, household oven tray, industrial drum washing machine)

·Photovoltaic system (solar cell substrate).

BOROFLOAT ® 33 specifications and thickness:

Thickness: 0.70-25.40mm Standard size: 1150 ′ 850mm

Thickness: 3.30~15.00mm Standard size: 2300 ′ 1700mm

Thickness: 16.00-25.40mm Standard size: 1700 ′ 1300mm

Measure the thickness of the sheet metal using a laser measuring instrument during the production process. Other services can be provided according to customer requirements.

BOROFLOAT ® 33 Thermal Characteristics:

The characteristics of low coefficient of thermal expansion, strong resistance to thermal shock, and the ability to withstand high temperatures of 450 ° C for a long time make BOROFLOAT ®  33 is particularly suitable for applications that require good temperature stability, such as the inner plate of a pyrolysis self-cleaning oven, the outer cover plate of high-power stage lights, and high-power floodlights.
Linear expansion coefficient α(20-300ºC) 3.25*10-6 k-1(ISO 7991)  
heat capacity Cp(20-100ºC) 0.83 KJ*(kg*K)-1 This working temperature is only applicable when both the same temperature difference (RTG) and thermal shock resistance (RTS) values are met simultaneously.
thermal conductivity λ(90ºC) 1.2W*(m*K)-1
Working temperature (long-term) δ max (< 10 h) 550ºC
Working temperature (short-term) δ max (>= 10 h) 450ºC

High Boron Silicon/Optical Communication Application SubstrateHigh Boron Silicon/Optical Communication Application SubstrateHigh Boron Silicon/Optical Communication Application SubstrateHigh Boron Silicon/Optical Communication Application SubstrateHigh Boron Silicon/Optical Communication Application Substrate

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