The product is used in crystal-growing in Sic,EPI,Sic and PVT with the below advantage:
1.Pefect high temperature durability
2.Excellent thermal shock resistance
3.Excellent acid and alkali corrosion
4.Prevent the discharge of the plated matrix particles
5.The air tightness is excellent and covers all the micropores of the substrate
6. It has strong resistance to oxidation /silicification in high-temperature
D.SiC Physics characteristic
| Description |
Unit |
Parameter |
| Density |
g/cm3 |
3.2 |
| Crystal type |
|
β-SiC |
| Hardness |
HK |
2800 |
| Bending strength |
Mpa |
170 |
| Yang's Modulus |
Gpa |
320Gpa |
| Room temperature bonding force |
Mpa |
>8Mpa |
| size |
mm |
0~2400 |
| thickness |
um |
10~1000 |
| thermal conductivity |
W/(m.K) |
290 |
| surface infrared reflectivity |
% |
23 |
| depositable substrate |
|
reaction sintering silicon carbide recrystalline carbonization |
| silicon non-pressure sintered silicon carbide Graphite |
| |
D. Pyro physics charateristics |
|
| Description |
Unit |
Parallel to the coating surface |
Perpendicular to the coating surface |
| Density |
Mg/m |
2.2 |
2.2 |
| Hardness |
HSD |
100 |
- |
| Resistance rate |
μΩ·m |
2.00-4.00 |
2~5x10 |
| Thermal expansion coefficient RT-500ºC |
105/K |
<2.2 |
28 |
| Tensile strength |
Mpa |
110 |
- |
| Yang's module |
Gpa |
30 |
- |
| Thermal conductivity rate |
W/(m·K) |
170-420 |
3 |
| Permeability |
% |
- |
0 |
| Surface infrared reflectivity |
% |
- |
50 |
Audited Supplier 
The product is used in crystal-growing in Sic,EPI,Sic and PVT with the below advantage:
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