The Graphite Disk for Mocvd

• Application: Temperature Measurement
• Batch Number: 2023+
• Certification: RoHS
• Manufacturing Technology: Discrete Device
• Material: Compound Semiconductor
• Model: ST
• Model NO.: Raytek-ZN001
• Package: CSP
• Signal Processing: Analog Digital Composite and Function
• Type: Intrinsic Semiconductor
• Round Disk: D50mm*3
• High Temperature Durability Durability: Excellent Thermal Shock Resistance
• Excellent Acid Resistance: 1000USD
• Transport Package: Seperate Package
• Specification: as requested
• Trademark: Raytek
• Origin: China
• HS Code: 38019090
• Production Capacity: 50000/Year

Product Description

 The product is used in crystal-growing in Sic,EPI,Sic and PVT with the below advantage:

 1.Pefect high temperature durability     
 2.Excellent thermal shock resistance 
 3.Excellent acid and alkali corrosion
 4.Prevent the discharge of the plated matrix particles
 5.The air tightness is excellent and covers all the micropores of the substrate
6. It has strong resistance to oxidation /silicification in high-temperature 

                                                                                      D.SiC Physics characteristic 
 

Description	Unit	Parameter
Density	g/cm3	3.2
Crystal type		β-SiC
Hardness	HK	2800
Bending strength	Mpa	170
Yang's Modulus	Gpa	320Gpa
Room temperature bonding force	Mpa	>8Mpa
size	mm	0~2400
thickness	um	10~1000
thermal conductivity	W/(m.K)	290
surface infrared reflectivity	%	23
depositable substrate		reaction sintering  silicon carbide recrystalline carbonization
		silicon non-pressure sintered silicon carbide Graphite

	D. Pyro physics charateristics
Description	Unit	Parallel to the coating surface	Perpendicular to the coating surface
Density	Mg/m	2.2	2.2
Hardness	HSD	100	-
Resistance rate	μΩ·m	2.00-4.00	2~5x10
Thermal expansion coefficient RT-500ºC	105/K	<2.2	28
Tensile strength	Mpa	110	-
Yang's module	Gpa	30	-
Thermal conductivity rate	W/(m·K)	170-420	3
Permeability	%	-	0
Surface infrared reflectivity	%	-	50