Supporting Ring for Semiconductor Crystal-Growing

• After-sales Service: Technical Support
• Warranty: 2years
• Transport Package: Fine Package
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: Raytek-ZN004
• Specification: as requested
• Trademark: Raytek
• Origin: China
• HS Code: 38019090
• Production Capacity: 50000/Year
• Package Size: 50.00cm * 30.00cm * 20.00cm
• Package Gross Weight: 1.000kg
• Lead Time: 10 days (1 - 1 Pieces) ; To be negotiated ( > 1 Pieces)

Product Description

Our products have been verified in batches by many well-known 8-12 inch semiconductor customers and it is used in crystal-growing in Sic,EPI,Sic and PVT with the below advantage:

 1.Pefect high temperature durability     
 2.Excellent thermal shock resistance 
 3.Excellent acid and alkali corrosion
 4.Prevent the discharge of the plated matrix particles
 5.The air tightness is excellent and covers all the micropores of the substrate
6. It has strong resistance to oxidation /silicification in high-temperature 
 

D.Pyro physics characteristic
Density	Mg/m	2.2	2.2
Hardness	HSD	100	-
resistivity	μΩ·m	2.00-4.00	2~5x10
Thermal expansion coefficient RT-500ºC	105/K	<2.2	28
Tensile strength	Mpa	110	-
Yang's modulus	Gpa	30	-
thermal conductivity	W/(m·K)	170-420	3
Breathability	%	-	0
Surface infrared reflectivity	%	-	50

D.Sic physics characteristics
Descreption	Unit	Parameters
Density	g/cm3	3.2
crystal type		β-SiC
hardness	HK	2800
bengding resistance	Mpa	170
Yang's module	Gpa	320Gpa
Binding force of room temperature and coating	Mpa	>8Mpa
possible size	mm	0~2400
depositionable thickness	um	10~1000
Termal conductivity	W/(m.K)	290
surface infrared reflectivity	%	23
Depositionalbe substrat		Sintered-silicon-carbide recrystallization and carbonization
		silicon non-pressure sintered silica carbide